Screening of charged impurities in semiconductors in intense magnetic fields

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Abstract
The features of the screening of an ionized impurity of a semi-conductor have been calculated for fields sufficiently strong that the n=0 Landau level approaches the Fermi level at very low temperatures. The variation of the strength of the screened potential and its range along and perpendicular to the fields have been studied as a function of field strength. The scattering amplitude of n=0 electrons has been analyzed in the regime in question, and it is shown that the potential may to a reasonable approximation be taken to be of zero range in the field direction but not in the transverse one. The results are illustrated with numerical calculations for GaAs with 4*1016 carriers.