Spatial distribution of vacancy defects in GaP wafers
- 15 April 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8) , 2583-2585
- https://doi.org/10.1063/1.340994
Abstract
Cathodoluminescence scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy-type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.This publication has 15 references indexed in Scilit:
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