Observation of recombination-enhanced defect reactions (REDR) at low temperature by means of cathodoluminescence and photoluminescence in GaP
- 16 December 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (2) , K203-K206
- https://doi.org/10.1002/pssa.2210680263
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Extended defects in III‐V semiconductor compoundsCrystal Research and Technology, 1981
- Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescenceJournal of Applied Physics, 1980
- Annihilation of frozen-in point defects in GaP by thermal and recombination-induced processesApplied Physics Letters, 1979
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductorsAdvances in Physics, 1977
- Injection-stimulated dislocation motion in semiconductorsApplied Physics Letters, 1976
- Observation of athermal defect annealing in GaPApplied Physics Letters, 1976
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974