Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence
- 1 February 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 978-983
- https://doi.org/10.1063/1.327678
Abstract
A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.This publication has 16 references indexed in Scilit:
- Evaluation of defects in InP and InGaAsP by transmission cathodoluminescenceJournal of Applied Physics, 1979
- Degradation of high-radiance Ga1−xAlxAs LED’sApplied Physics Letters, 1977
- Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser materialApplied Physics Letters, 1976
- X-ray topographic study of dark-spot defects in GaAs-Ga1−xAlxAs double-heterostructure wafersApplied Physics Letters, 1975
- Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser materialApplied Physics Letters, 1975
- Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure CrystalsJapanese Journal of Applied Physics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission linesOptics Communications, 1971
- Cathodoluminescent studies of laser quality GaAsJournal of Materials Science, 1968
- Optical Inhomogeneities in Gallium ArsenideJournal of Applied Physics, 1966