Extended defects in III‐V semiconductor compounds
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (2) , 203-208
- https://doi.org/10.1002/crat.19810160214
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Properties of an extended defect in GaAs.62P.38Published by Springer Nature ,1980
- Depleted layer spectroscopyPublished by Springer Nature ,1980
- DISLOCATION DEFECT STATES IN SILICONLe Journal de Physique Colloques, 1979
- Defect states associated with dislocations in siliconApplied Physics Letters, 1979
- Recombination at dislocationsSolid-State Electronics, 1978
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Recombination of Electrons and Holes at DislocationsPhysical Review B, 1956