ComplexGa0(4p1)andIn0(5p1)centers in KC1. Electron-spin-resonance study

Abstract
A detailed electron-spin-resonance (ESR) study has been made of trapped electron centers in KC1 doped with the ns2 metal ions M+=Ga+,In+. X-ray irradiation at 77 K produces by simple electron trapping the primary M0 atom defects which manifest themselves as linear symmetric 100-oriented MCl22 molecule ions. Both centers exhibit a reorientation motion with very low activation energy, and the relevance of this for the nonobservability of the primary T10 ESR spectrum is discussed. An x-ray irradiation above 220 K, where negative ion vacancies become mobile, leads to several complex M0 defects. Two of them, called M0(1) and M0(2), are analogous to the T10(1) and T10(2) defects studied earlier, and their structures are confirmed: In M0(1) a M0 on a cation site is associated with a single anion vacancy, and in M0(2) the M0 is flanked by two anion vacancies. For both centers there is an appreciable delocalization of the unpaired electron. An additional center, called Ga0 (axial), is shown to be in essence an orthorhombic center which exhibits even at ∼10 K a rapid reorientation between two equivalent Jahn-Teller distortions in a {100} plane. An analysis of the ESR parameters reveals regularities in the variation of the isotropic part of the M0 hyperfine interaction which can be related to the even or odd character of the perturbing crystal field. Extensive data on the production and thermal properties of the different defects are also given.