On the influence of a gaseous boundary layer on the oxidation of reaction-bonded silicon nitride at 1400° C
- 1 January 1979
- journal article
- letter
- Published by Springer Nature in Journal of Materials Science
- Vol. 14 (1) , 235-237
- https://doi.org/10.1007/bf01028351
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Some effects of Al and O2 on the nitridation of silicon compactsJournal of Materials Science, 1976
- The Active Oxidation of Si and SiC in the Viscous Gas‐Flow RegimeJournal of the Electrochemical Society, 1976
- Passivity during the Oxidation of Silicon at Elevated TemperaturesJournal of Applied Physics, 1958