Minimizing dc drift in LiNbO3 waveguide devices
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 211-213
- https://doi.org/10.1063/1.96220
Abstract
Improved stability against electrical dc bias drift has been demonstrated in LiNbO3 electro‐optic modulators by replacing the commonly used SiO2 buffer layer with indium tin oxide (ITO), a transparent conductor. The long term drift of the modulators having an ITO buffer layer with a sheet resistivity of ∼20 Ω/⧠ is less than 0.3% in 8 h. The mechanism of the dc drift phenomenon is discussed using an electrical equivalent circuit model of the modulator.Keywords
This publication has 3 references indexed in Scilit:
- Preparation and characterization of rf sputtered indium tin oxide filmsJournal of Applied Physics, 1985
- Infrared transparent and electrically conductive thin film of In2O3Applied Physics Letters, 1983
- DC Drift Phenomena in LiNbO3 Optical Waveguide DevicesJapanese Journal of Applied Physics, 1981