Infrared transparent and electrically conductive thin film of In2O3

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Abstract
High quality infrared (1–12 μ) transparent and electrically conductive thin films based on thermal reactively evaporated In2O3 have been developed. Optical constants of these films have been obtained by the use of an iteration technique, which involves the formulas for multiple transmission and reflection. The details of the film deposition process and the theoretical foundation leading to its development are discussed in this letter. It has been found that the transparency and conductivity of these films are primarily due to their high electron mobility coupled with an appropriate electron concentration. A multilayer design of a bandpass induced transmission and antireflection coating has been developed and implemented on ZnS and ZnSe substrates for the wavelength range of 8–12 μ. Typical transmittance of 65%–80% with a film sheet resistance of 20–50 Ω/⧠ has been achieved. Such a design is applicable to forward‐looking infrared systems where a window having both high electromagnetic (rf and microwave) shielding effectiveness and good infrared transparency are required. The properties of these films lend themselves to many other potential applications.