Cyclotron resonance of localized electrons inn-type Cd-Mn-Se
- 15 October 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (8) , 5543-5546
- https://doi.org/10.1103/physrevb.32.5543
Abstract
Electron cyclotron resonance has been observed in a wide-gap semiconductor Se at helium temperatures where practically all electrons are bound on donors. The number of electrons participating in the cyclotron resonance absorption of far-infrared radiation increases rapidly as the resonance magnetic field is raised from 1.5 to 5 T. The origin of the implied extended electronic states is attributed to an Anderson-type transition in clusters of donors of higher than average concentration and volume which is greater than (4π/3) (magnetic length, resulting from random fluctuations of local donor density.
Keywords
This publication has 7 references indexed in Scilit:
- Far-infrared absorption inCd1−xMnxSe: New impurity-band effectsPhysical Review B, 1984
- Far-infrared observation of the electric-dipole spin resonance of donor electrons inPhysical Review B, 1984
- Hopping conduction of the bound magnetic polarons in n-CdMnSePhysica B+C, 1983
- Levels inPhysical Review Letters, 1983
- Metal-insulator transition in doped semiconductorsPhilosophical Magazine Part B, 1980
- A circular polarizer for reflection in the far-infraredInfrared Physics, 1978
- Cyclotron resonance in strongly compensated n-InSbPhysics Letters A, 1972