Infrared Detection by Schottky Barriers in Epitaxial PbTe

High‐quality infrared detectors have been made from Pb Schottky barriers on epitaxial PbTe layers. At 77 °K these devices are limited by the 300 °K background at f/1.7 and attain Johnson noise‐limited peak detectivities ${\mathrm{[D}}_{\lambda }^{*}\text{(5.5\hspace{0.17em}μ}\mathrm{m}\text{,\hspace{0.17em}600,\hspace{0.17em}1)]}$ of 6×10¹¹ cm Hz^1/2W⁻¹ with further reduction of the background. The diode quantum efficiencies reach 50–60%.