Plasma anodization of Hg1−xCdxTe

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Abstract
A new plasma oxidation process for forming oxide films on Hg1−xCdxTe is described. Electrical measurements on metal‐insulator‐semiconductor devices employing the native oxide are presented. The oxide films have a relatively low fixed surface charge density of (1–3)×1011 e cm−2 and in this respect are superior to oxides growth by chemical anodization. For insulators which are a combination of 300‐Å native oxide and 2000‐Å ZnS the measured flat‐band voltages are −0.5 and −2.5 V for n‐t and p‐type substrates, respectively. The measured work‐function difference is −1.7 V for indium gate structures and the relative dielectric constant of the oxide is 13. The capacitance‐voltage and current‐voltage characteristics indicate an interface well suited for devices such as photoconductors, photovoltaic diodes, and charge‐coupled devices.

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