Improved Thermally Stimulated Current Spectroscopy to Characterize Levels in Semi-Insulating GaAs
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A) , L273-275
- https://doi.org/10.1143/jjap.25.l273
Abstract
Deep levels in semi-insulating GaAs were observed at low temperatures by means of improved thermally stimulated current (TSC) spectroscopy. The improvement was done by thinning the specimen and adding a guard ring electrode. The ionization energy of the levels was limited to below 0.7 eV. The concentration of 1013 cm-3 was easily measured with an electrode area of 5 mm2. Spectra by electron traps and hole traps were separated by changing the bias polarity.Keywords
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