0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography
- 23 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Thermal stability of MoAu and TiPtAu nonalloyed InGaAs contactsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs DevicesJapanese Journal of Applied Physics, 1991