Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices

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Abstract
A phase-shifting mask technique using an i-line stepper was applied to the gate formation process of AlGaAs/GaAs high electron mobility transistors (HEMTs). To obtain a fine gate pattern of less than a quarter micron, the phase-shifter edge-line mask, which has the highest resolution and wide focus margin for an isolated pattern, was used and the double exposure process was developed to form a real gate pattern. The controllable gate length was in the range of 0.50-0.15 µm. By using this technique, 0.18 µm-gate HEMTs with good and uniform microwave performances in a 3-inch wafer were obtained. This technique has great advantages for applications to microwave GaAs devices and ultrahigh-speed GaAs LSIs.

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