Damage and lattice strain in ion-irradiated AlAs
- 25 July 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 421-423
- https://doi.org/10.1063/1.112320
Abstract
Radiation‐induced damage and strain in AlAs were investigated by measurements of the lattice parameter using x‐ray diffraction. Irradiations employed MeV C, Ar, and Auion beams at 25 or 80 K. The out‐of‐plane lattice parameter increased with fluence at low doses, saturated, and then decreased to nearly its original value. The in‐plane lattice parameter did not change, throughout. These results were independent of the irradiation particle when scaled by damage energy. Selected samples were examined by high‐resolution and conventional transmission electron microscopy. Recovery of the lattice parameter during subsequent thermal annealing was also investigated.Keywords
This publication has 15 references indexed in Scilit:
- Interfacial damage in ion-irradiated GaAs/AlAs superlatticesPhysical Review B, 1993
- F-Centers and Oxygen-Interstitials in MgOMRS Proceedings, 1992
- Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAsApplied Physics Letters, 1991
- Anisotropic Damage Production at ION Irradiated GaAs/AlAs InterfacesMRS Proceedings, 1991
- Metalorganic chemical vapor depositionCritical Reviews in Solid State and Materials Sciences, 1988
- Strain induced amorphization of niobium by boron implantationSolid State Communications, 1986
- Atomic size effect on the formability of metallic glassesJournal of Non-Crystalline Solids, 1984
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Interstitial trapping and detrapping in electron irradiated dilute copper alloysJournal of Physics F: Metal Physics, 1975
- The Radiation Annealing of Frenkel Defects an Approach Based on a Simple Statistical ModelPhysica Status Solidi (b), 1964