Electron diffusion length in solution-grown GaAs : Ge
- 1 January 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (1) , 23-25
- https://doi.org/10.1063/1.1654458
Abstract
The optical microprobe is used to measure electron diffusion lengths in solution‐grown p‐type layers of Ge‐doped GaAs. They are found to be ∼ 20 μ, which gives an electron lifetime of ∼ 5×10−8 sec.Keywords
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