EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD-CATHODE STRUCTURES
- 15 May 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (10) , 413-414
- https://doi.org/10.1063/1.1653472
Abstract
An optoelectronic cold‐cathode structure has been operated at pulsed (1% duty cycle emission current densities of 3 A/cm2 at an over‐all efficiency of 1.6%. Continuous operation at a current density of 0.4 A/cm2 and an efficiency of 0.43% has been observed.Keywords
This publication has 6 references indexed in Scilit:
- COLD-CATHODE ELECTRON EMISSION FROM SILICONApplied Physics Letters, 1971
- EFFICIENT PHOTOEMISSION FROM Ge-DOPED GaAs GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1971
- Operation of III-V Semiconductor Photocathodes in the Semitransparent ModeJournal of Applied Physics, 1970
- AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTUREApplied Physics Letters, 1970
- Characteristics of a ZnS:Pd:Cs2O Cold CathodeJournal of Applied Physics, 1970
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965