Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4R) , 1723-1727
- https://doi.org/10.1143/jjap.33.1723
Abstract
We studied the formation of oxygen clusters in quenched Czochralski (Cz)-grown silicon crystals. The formation and the dissociation of vacancy-oxygen complexes introduced by electron irradiation (3 MeV, 1×1018 e-/ cm2) were studied by infrared spectroscopy and the positron annihilation technique. From the annealing behavior of vacancy-oxygen complexes, it is found that oxygen clusters are introduced by quenching. These clusters are nuclei for enhanced oxygen precipitation in quenched Cz-grown silicon crystals.Keywords
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