Kinetic study of the 830- and 889-cm−1infrared bands during annealing of irradiated silicon

Electron-irradiated Czochralski-grown silicon samples have been isothermally annealed at four different temperatures in the range of 300 to 350?deC. The irradiation was performed at nominal room temperature with use of 2.0-MeV electrons and the bombardment dose was 1.0×${10}^{18}$ $e^{\mathrm{-}}$/${\mathrm{cm}}^2$. After the irradiation, a dominant infrared (ir) band appears at 830 ${\mathrm{cm}}^{\mathrm{-}1}$ which is attributed to a vacancy-oxygen (VO) complex. The 830-${\mathrm{cm}}^{\mathrm{-}1}$ band is stable up to temperatures of about 300°C where its strength decreases and a new prominent band at 889 ${\mathrm{cm}}^{\mathrm{-}1}$ develops. The decrease of the 830-${\mathrm{cm}}^{\mathrm{-}1}$ band can be divided into one fast and one slow component. The fast component dominates at the initial stage of the annealing process and its relative influence is related to electron bombardment dose. The slow component dominates at a later stage and is usually the major term. Moreover, the growth of the 889-${\mathrm{cm}}^{\mathrm{-}1}$ band is proportional to the slow component. Activation energies and frequency factors for the loss of the 830-${\mathrm{cm}}^{\mathrm{-}1}$ band and the growth of the 889-${\mathrm{cm}}^{\mathrm{-}1}$ band are determined and, finally, some different reaction models are discussed and compared with the experimental data. A model where the fast component is treated as a second-order reaction and the slow component is assumed to consist of two first-order processes with different rate constants shows good agreement with the experimental values.