Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor
- 1 May 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 112 (1-4) , 228-232
- https://doi.org/10.1016/0168-583x(95)01279-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafersIEEE Electron Device Letters, 1992
- In situ pseudo—MOS transistor in as-grown silicon on insulator wafersMicroelectronic Engineering, 1991