1.3 µm InGaAsN vertical cavity surface emitting lasers grown by MOCVD

7 November 2002

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 38 (23) , 1438-1440
https://doi.org/10.1049/el:20021000

Abstract

The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 µm are reported. The devices were of conventional pin structure with doped DBR mirrors. CW lasing up to 65°C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for singlemode devices.

Keywords

This publication has 4 references indexed in Scilit:

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Japanese Journal of Applied Physics, 2001
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Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
Japanese Journal of Applied Physics, 2000