Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

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Abstract
Highly strained 1.3 µm range GaInNAs/GaAs double quantum-well lasers grown by metalorganic chemical vapor deposition are demonstrated. A high characteristic temperature of 205 K (22–80°C) was obtained with a low threshold current density of 0.92 kA/cm2 (22°C) in a broad stripe laser. The highest lasing operation temperature of 170°C, and continuous-wave operation with a low threshold current of 27 mA were also obtained in a 7.5-µm-wide ridge-stripe laser. The GaInNAs/GaAs material system is very promising for next-generation long-wavelength lasers.