1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates
- 1 September 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (9A) , L990
- https://doi.org/10.1143/jjap.38.l990
Abstract
Highly strained GaInAs quantum well lasers emitting at 1.21 µm are fabricated on GaAs substrates. Room-temperature continuous-wave operation with a low threshold current density of 360 A/cm2 is achieved. 1.3 µm GaInNAs/GaAs lasers can be fabricated at a low nitrogen content of 0.5%.Keywords
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