Optical analysis of wet chemically etched InGaAs/InP wires
- 31 March 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 17 (1) , 501-504
- https://doi.org/10.1016/0167-9317(92)90102-w
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wiresApplied Physics Letters, 1990
- Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wiresApplied Physics Letters, 1989
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987