Elemental marking of Si on Si(100) interfaces
- 20 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3) , 309-311
- https://doi.org/10.1063/1.107921
Abstract
Submonolayer coverages of B, Sn, and Ge are prepared on Si(100) surfaces, and characterized using time-of-flight scattering and recoiling spectroscopy. The dopant ‘‘marks’’ the initial Si interface, and Si is grown on top of the ‘‘marked’’ surface, and is designated Si*. Attenuation of the elemental B, Sn, and Ge signals by Si* is used to evaluate Si precursors for atomic layer epitaxy, and compare the thermal stability of Si*/B/Si(100), Si*/Sn/Si(100), and Si*/Ge/Si(100) structures.Keywords
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