Self-Limiting Adsorption of SiCl2H2 and Its Application to the Layer-by-Layer Photochemical Process
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A) , L209
- https://doi.org/10.1143/jjap.30.l209
Abstract
Adsorption of SiCl2H2 on the Ge(100) clean surface is investigated by X-ray photoelectron spectroscopy and thermal desorption spectrum measurement. It is concluded that the adsorption is self-limiting at temperatures below 350°C, and that the surface is reactivated by synchrotron radiation. The sequential processes of self-limiting adsorption of SiCl2H2 and synchrotron radiation are promising for development of Si atomic layer epitaxy.Keywords
This publication has 9 references indexed in Scilit:
- Molecular layer epitaxy of siliconJournal of Crystal Growth, 1990
- Ge Atomic Layer Epitaxy by Use of Ar Ion Laser HeatingJapanese Journal of Applied Physics, 1989
- Theoretical studies on the growth mechanisms of silicon thin films by atomic layer epitaxySurface Science, 1989
- Photon-stimulated desorption of fluorine from silicon via substrate core excitationsPhysical Review B, 1989
- Synchrotron radiation stimulated semiconductor processes: Chemical vapor deposition and etchingReview of Scientific Instruments, 1989
- Germanium Atomic Layer Epitaxy Controlled by Surface Chemical ReactionsJournal of the Electrochemical Society, 1989
- Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge filmsJournal of Applied Physics, 1986
- Selective Ge deposition on Si using thermal decomposition of GeH4Applied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985