Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11R)
- https://doi.org/10.1143/jjap.28.2387
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Germanium Atomic Layer Epitaxy Controlled by Surface Chemical ReactionsJournal of the Electrochemical Society, 1989
- Growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Selective Ge deposition on Si using thermal decomposition of GeH4Applied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985