High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
- 24 October 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 73 (17) , 2356-2359
- https://doi.org/10.1103/physrevlett.73.2356
Abstract
Luminescence of bulk InP at 1.41 eV is observed when photoexciting a type-II InP-AIInAs single heterojunction above the spatially indirect band gap at 1.23 eV. This energy up-conversion effect, which is extremely efficient even at moderate pump power, is due to an "Auger fountain" mechanism producing high energy holes which redistribute over the heterostructure and recombine with native electrons in the InP layer. The analysis of this phenomenon suggests technological applications as well as analogies with other fields like photochemistry.Keywords
This publication has 7 references indexed in Scilit:
- Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructuresSolid State Communications, 1993
- Photoluminescence up-conversion induced by intersubband absorption in asymmetric coupled quantum wellsPhysical Review Letters, 1993
- Observation of laser emission in an InP-AlInAs type II superlatticeApplied Physics Letters, 1992
- Optical transitions and chemistry at the In0.52Al0.48As/InP interfaceApplied Physics Letters, 1992
- Auger recombination within Landau levels in a two-dimensional electron gasPhysical Review Letters, 1991
- Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAsIEEE Journal of Quantum Electronics, 1986
- Auger recombination in GaAs and GaSbPhysical Review B, 1977