Cotunneling at resonance for the single-electron transistor

Preprint

21 February 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9702196

Abstract

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.

Keywords

COTUNNELING
ELECTRON TRANSISTOR
ISLAND
MODIFICATIONS
PROCESS REFERRED
RESONANCE
SINGLE ELECTRON
SMALL METALLIC
TRANSISTOR
TUNNELING

All Related Versions

Version 1, 1997-02-21, ArXiv
Published version: Physical Review Letters, 78 (23), 4482.

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