Cotunneling at Resonance for the Single-Electron Transistor
- 9 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (23) , 4482-4485
- https://doi.org/10.1103/physrevlett.78.4482
Abstract
We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor to fourth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cutoff. At resonance we find significant deviations from previous theories and quantitative agreement with recent experiments.Keywords
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