Subthreshold MOSFET conduction model and optimal scaling for deep-submicron fully depleted SOI CMOS
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CADIEEE Transactions on Electron Devices, 1988