Hydrogen-sensitive silicon tunnel MIS switching diodes
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (4) , 88-89
- https://doi.org/10.1109/edl.1983.25658
Abstract
Palladium thin SiO2-n-p+silicon switching diodes have been fabricated in which the turn-on voltage changes in proportion to the hydrogen concentration in the ambient gas. In the typical diode operated at 100°C, the switching voltage decreases from 5.1 to 3.6 V for 10 ppm hydrogen in air within 2 min and the off-state disappears for 100 ppm within 30 s. Hydrogen sensitivity is ascribed to the increase of a current gain in two transistor model of the device due to the change in palladium work-function.Keywords
This publication has 6 references indexed in Scilit:
- A study on a palladium-titanium oxide Schottky diode as a detector for gaseous componentsSurface Science, 1980
- Theory of switching in p-n-insulator (tunnel)-metal devices: Part I: Punchthrough modeSolid-State Electronics, 1979
- Experimental studies of switching in metal semi-insulating n-p+ silicon devicesSolid-State Electronics, 1977
- Silicon p−n insulator-metal (p-n-I-M) devicesSolid-State Electronics, 1976
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975
- Bistable impedance states in MIS structures through controlled inversionApplied Physics Letters, 1973