Optimal cavity design for low-threshold-current-density operation of double-heterojunction diode lasers
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1) , 57-60
- https://doi.org/10.1063/1.90908
Abstract
A simple and accurate closed‐form expressed for the threshold‐current density J th in symmetric DH structures is presented. The novel expresion allows analytical solutions for d o , the active‐layer thickness corresponding to minimum threshold‐current density. Optimization of the cavity thickness for minimum J th is presented for wide variations in cavity length (100–500 μm) and facet reflectivity values. The analytical formulas are applied to the AlGaAs/GaAs system and extended to the InGaAsP/InP system. By using previously published experimental results, a linear gain‐current relationship is estimated for InGaAsP (λ=1.2–1.3 μm), and thus it is found that d o should vary between 0.12 and 0.20 μm as the cavity parameters (length and facet reflectivity) change; and that minimum J th values should be comparable to the J th values for AlGaAs lasers with the same cavity parameters.Keywords
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