Regrowth of radiation-damaged layers in natural diamond
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 420-423
- https://doi.org/10.1016/0168-583x(90)90866-s
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Lattice orientation of defects in ion-implanted diamondNuclear Instruments and Methods in Physics Research, 1983
- Channelling analysis of high temperature ion-implanted diamondNuclear Instruments and Methods, 1981
- Damage and lattice location studies in high-temperature ion-implanted diamondApplied Physics Letters, 1981
- Radiation damage and annealing in Sb implanted diamondRadiation Effects, 1980
- A percolation theory approach to the implantation induced diamond to amorphous-carbon transitionRadiation Effects, 1980
- Hard conducting implanted diamond layersApplied Physics Letters, 1977
- Hopping conductivity in C-implanted amorphous diamond, or how to ruin a perfectly good diamondSolid State Communications, 1976
- The optical absorption of electron-irradiated semiconducting diamondBritish Journal of Applied Physics, 1966
- Diamond-Graphite Equilibrium Line from Growth and Graphitization of DiamondThe Journal of Chemical Physics, 1961