Interface roughness and polar optical phonon scattering in RTDs
- 1 August 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (8A) , A163-A164
- https://doi.org/10.1088/0268-1242/13/8a/046
Abstract
The contributions of interface roughness scattering and polar optical phonon scattering to the valley current of resonant tunnelling diodes (RTDs) are theoretically found to be comparable. An RTD design is suggested to experimentally observe the phonon peak which has never been observed in this material system. Such a device will provide a calibration point for the theoretical calculations.Keywords
This publication has 11 references indexed in Scilit:
- Single and multiband modeling of quantum electron transport through layered semiconductor devicesJournal of Applied Physics, 1997
- Quantitative simulation of a resonant tunneling diodeJournal of Applied Physics, 1997
- Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diodeSuperlattices and Microstructures, 1996
- Interface roughness scattering in AlAs/InGaAs resonant tunneling diodes with an InAs subwellJournal of Applied Physics, 1996
- Experimental sensitivity analysis of pseudomorphic InGaAs/AlAs resonant-tunneling diodesJournal of Applied Physics, 1995
- Phonon-assisted tunneling from a two-dimensional emitter statePhysical Review B, 1994
- ELECTRON-OPTICAL PHONON INTERACTIONS IN POLAR SEMICONDUCTOR QUANTUM WELLSInternational Journal of Modern Physics B, 1993
- Effects of electron-interface-phonon interaction on resonant tunnelling in double-barrier heterostructuresSemiconductor Science and Technology, 1992
- Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructuresApplied Physics Letters, 1988
- Observation of intrinsic bistability in resonant tunnelling devicesElectronics Letters, 1988