Effects of electron-interface-phonon interaction on resonant tunnelling in double-barrier heterostructures
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B83-B87
- https://doi.org/10.1088/0268-1242/7/3b/020
Abstract
The tunnelling current through a resonant tunnelling structure is calculated including electron-interface-phonon coupling in the quantum well. The Hamiltonian describing electron-phonon interaction in a double-barrier structure is derived using the dielectric continuum model. The result shows that interface phonons of the barrier play a significant role in the double-barrier structure whose barrier width is greater than the well width.Keywords
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