Reflection high-energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A
- 10 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 190-192
- https://doi.org/10.1063/1.111528
Abstract
We have made a study of reflection high-energy electron diffraction intensity oscillations during the growth of GaAs on singular GaAs (111)A substrates by molecular beam epitaxy. The behavior is quite different from growth of GaAs on (001) orientated substrates in that the oscillation period is growth temperature and As4:Ga flux ratio dependent. We speculate that this is due to the (110)-like configuration of the (111)A 2×2 reconstructed surface, which requires direct interaction of a Ga and an As atom for growth to occur.Keywords
This publication has 11 references indexed in Scilit:
- Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) filmsApplied Physics Letters, 1993
- Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxyApplied Physics Letters, 1992
- Direct synthesis of semiconductor quantum wires by molecular-beam epitaxy on (311) surfacesJournal of Crystal Growth, 1991
- Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBEJournal of Crystal Growth, 1991
- Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in SemiconductorsJapanese Journal of Applied Physics, 1989
- Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growthJapanese Journal of Applied Physics, 1989
- Strain-generated electric fields in [111] growth axis strained-layer superlatticesSolid State Communications, 1986
- Atomic and electronic structures of (111), (211), and (311) surfaces of GaAsJournal of Vacuum Science & Technology B, 1985
- Photoemission and theoretical studies of GaAs(111) and (1¯ 1¯ 1¯) surfaces: Vacancy modelsPhysical Review B, 1985
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984