Transport properties of bismuth films

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Abstract
Glass‐coated bismuth films were deposited onto a glass substrate at room temperature and their Hall coefficients and electrical resistivities were measured between 77 and 300°K. Scanning electron micrographs revealed that the films prepared in this way were more polycrystalline than those deposited onto a heated mica substrate. Interesting features were found in the temperature dependence of the Hall coefficient: the thinner films with thickness t 500 Å were always n type over the temperature ranges studied. Hall mobility and magnetoresistance data are also presented here and the experimental results are discussed qualitatively.