Study of Interfacial Point Defects by Ballistic Electron Emission Microscopy

Ballistic electron emission microscopy has been used to study individual point defects, which are located at the ${\mathrm{CoSi}}_2/\mathrm{Si}\left(111\right)$ interface of thin ( $\sim 30Å$) silicide films grown epitaxially on silicon substrates by molecular beam epitaxy. Clear evidence for trapping of point defects at dislocations is presented. The lateral distribution of the interfacial point defects is explained in terms of diffusion during an annealing step in the growth process.