A novel basis set for quantum calculations in MESFET and JFET devices
- 1 October 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (4) , 246-255
- https://doi.org/10.1088/0268-1242/1/4/003
Abstract
Sub-band occupation in MESFET (metal-semiconductor field-effect transistors) and JFET (junction field-effect transistor devices) has been modelled by use of a simple (sinusoidal) basis set. Such a simple basis set has easily evaluated matrix elements, allowing calculations to be easily performed. The authors have calculated sub-band energies and Fermi energy against electron concentration in these devices and find good agreement with previously calculated results. They have compared gate voltage/electron concentration curves calculated in their quantum model with the abrupt depletion approximation. The quantum curves show no structure and good agreement with the abrupt depletion model. This shows the abrupt depletion model to be an excellent approximation in these devices for electrostatic problems, even in the quantum limit (one occupied sub-band).Keywords
This publication has 10 references indexed in Scilit:
- Density of states of GaAs-AlGaAs-heterostructures deduced from temperature dependent magnetocapacitance measurementsSolid State Communications, 1986
- Free-carrier absorption in quasi-two-dimensional semiconducting structures for nonpolar optical phonon scatteringJournal of Applied Physics, 1985
- Quantum corrections and the metal-insulator transition as a function of dimensionality in the GaAs impurity bandPhilosophical Magazine Part B, 1985
- Lifetime broadening of sub-band structure in the electrical conductivity of narrow-channel systemsJournal of Physics C: Solid State Physics, 1985
- Effects of quantum confinement in a special GaAs field effect transistor: on the DC conductance in the regime of metallic transportJournal of Physics C: Solid State Physics, 1985
- Static response of a jellium surface: The image potential and indirect interaction between two chargesPhysical Review B, 1984
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperaturesJournal of Physics C: Solid State Physics, 1982
- Low frequency noise in junction field effect transistorsSolid-State Electronics, 1978