Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperatures
- 30 January 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (3) , L21-L30
- https://doi.org/10.1088/0022-3719/15/3/004
Abstract
The authors have measured at low temperatures (4.2K to 1.2K) the Shubnikov-de Haas oscillations exhibited by the conducting channel of GaAs field effect transistors as the thickness of the channel and Fermi energy EF were reduced by the gate bias. The devices used were not of the conventional design in order to ensure that the conducting channel was in a region of constant doping. The experimental results are found to be in good agreement with both a WKB and variational calculation of the sub-band density of states and EF as a function of channel thickness. The authors therefore conclude that a continuous transition from three-dimensional to quasi-two-dimensional conduction has been demonstrated.Keywords
This publication has 2 references indexed in Scilit:
- Quantisation of electron states in a two-dimensional GaAs impurity band at low carrier concentrationsJournal of Physics C: Solid State Physics, 1980
- A metal-insulator transition in the impurity band of n-type GaAs induced by loss of dimensionJournal of Physics C: Solid State Physics, 1977