SIMOX-devices for analog circuits
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Beside the classical advantages of SOI, this technology offers the unique opportunity to integrate monolithically devices with vertical current pathes like high power DMOS-FETs or sensors with lateral (CMOS)-devices. The performance of sensors can be increased if analog circuits like amplifiers and/or A/D-converter are also integrated on the same chip. This can easier be done if the devices are dielectrically isolated as it is in the SIMOX-technology. Some sensors are running at an elevated temperature range above 100xC, the resulting requirements for the analog circuits can only fullfilled with the SIMOX-technology. But to run analog circuits on SIMOX care has to be taken about the Kink-effect, the BJT-breakdown, the single-transistor latch and for some applications the noise of the devices. In this paper we'll report about the results of the different approaches to deal with the mentioned itemsKeywords
This publication has 2 references indexed in Scilit:
- Dual-MOSFET structure for suppression of kink in SOI MOSFETs at room and liquid helium temperaturesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Simplified analysis of body-contact effect for MOSFET/SOIIEEE Transactions on Electron Devices, 1988