Photoreflectance from Landau Levels in InSb

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Abstract
We report the first observation of photoreflectance in an applied magnetic field. Oscillatory structure shown to be due to Landau levels is observed in InSb at photon energies up to 150 meV above the band gap. The observation of this structure demonstrates clearly that the dominant physical mechanism in the photoreflectance effect is not band filling, as proposed recently by several authors, since the higher Landau levels have no significant population.