Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure
- 21 August 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (8) , 1167-1169
- https://doi.org/10.1063/1.1289264
Abstract
A direct spectroscopic signature associated with the quantized state of the charge carriers in three-dimensionally confined InP quantum dots (QDs) is reported using a ballistic electron emission microscopy (BEEM)/spectroscopy technique. The self-assembled InP QDs are sandwiched in an AlInP double-barrier heterostructure. The excellent nanometer-scale lateral resolution of the BEEM technique is used to investigate the current transport mechanism by the direct injection of electrons into a single quantum dot. The BEEM spectra taken on and off the dot revealed the presence of a localized state at around 0.1±0.02 eV above the ground state.Keywords
This publication has 15 references indexed in Scilit:
- Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum wellElectronics Letters, 1999
- 3.5 W CW operation of quantum dot laserElectronics Letters, 1999
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and ConfinementJapanese Journal of Applied Physics, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasersApplied Physics Letters, 1998
- Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission MicroscopyPhysical Review Letters, 1996
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- Electron heating by lower hybrid waves in the PLT tokamakPhysical Review Letters, 1988
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987