A monolithic GaAs-on-Si receiver front end for optical interconnect systems
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 28 (6) , 622-630
- https://doi.org/10.1109/4.217976
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990
- Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low TemperaturesJournal of the Electrochemical Society, 1989
- I n s i t u substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardmentApplied Physics Letters, 1988
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuitsIEEE Transactions on Electron Devices, 1979