Mossbauer study of a complex Sn impurity defect in GaAs from implantations of radioactive119In ions
- 30 March 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (9) , L181-L183
- https://doi.org/10.1088/0022-3719/13/9/002
Abstract
A complex Sn impurity defect created by room-temperature implantation of radioactive 119In+ ions in GaAs has been studied by Mossbauer emission spectroscopy on the 24 keV gamma transition of the daughter 119Sn. From the Mossbauer parameters for the Sn impurity atoms, the defect structure is proposed to consist of (nearly) substitutional Sn atoms on Ga sites associated with vacancies.Keywords
This publication has 3 references indexed in Scilit:
- Mossbauer study of Sn impurity defect structures in GaAsJournal of Physics C: Solid State Physics, 1980
- Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive NucleiPhysical Review Letters, 1980
- New techniques at ISOLDE-2Nuclear Instruments and Methods, 1976