STM-induced H atom desorption from Si(100): isotope effects and site selectivity

This publication has 17 references indexed in Scilit:

• Vibrational dynamics of the Si–H stretching modes of the Si(100)/H:2×1 surface
  The Journal of Chemical Physics, 1995
• Theoretical study of the mechanism of recombinative hydrogen desorption from the monohydride phase of Si(100): The role of defect migration
  The Journal of Chemical Physics, 1994
• Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
  Applied Physics Letters, 1994
• Scanning tunneling microscopy (STM) studies of the chemical vapor deposition of Ge on Si(111) from Ge hydrides and a comparison with molecular beam epitaxy
  The Journal of Chemical Physics, 1994
• A local-Gaussian approximation for the propagation of a classical distribution function
  The Journal of Chemical Physics, 1991
• Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption
  Physical Review Letters, 1990
• Lifetime of an adsorbate-substrate vibration: H on Si(111)
  Physical Review Letters, 1990
• Atom-resolved surface chemistry using the scanning tunneling microscope
  The Journal of Physical Chemistry, 1990
• Mechanistic Studies of Chemical Vapor Deposition
  Annual Review of Physical Chemistry, 1987
• Electronic structures of the monohydride (2×1):H and the dihydride(1×1)∷2HSi(001) surfaces studied by angle-resolved electron-energy-loss spectroscopy
  Physical Review B, 1983