Breakdown in p-n junction diodes made on polycrystalline silicon of large grain size
- 1 September 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (5) , 2206-2208
- https://doi.org/10.1063/1.344319
Abstract
This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.This publication has 3 references indexed in Scilit:
- Field-enhanced emission and capture in polysilicon pn junctionsSolid-State Electronics, 1985
- Grain boundary diffusion of phosphorus in polycrystalline siliconJournal of Vacuum Science and Technology, 1982
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966