Temperature and bias effects on the electrical properties of CdS thin films prepared by r.f. sputtering
- 1 April 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 114 (4) , 327-334
- https://doi.org/10.1016/0040-6090(84)90132-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High performance all-sputter deposited Cu2S/CdS junctionsApplied Physics Letters, 1982
- High efficiency solar cells with CdS window layersThin Solid Films, 1982
- Deposition dependence of r.f.-sputtered CdS filmsThin Solid Films, 1982
- Summary Abstract: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrates by single source evaporationJournal of Vacuum Science and Technology, 1982
- Microstructure and properties of rf-sputtered amorphous hydrogenated silicon filmsJournal of Applied Physics, 1981
- Glow discharge sputteringProgress in Surface Science, 1976
- Temperature Rise during Film Deposition by rf and dc SputteringJournal of Vacuum Science and Technology, 1972
- The effects of oxygen adsorption and low energy ion bombardment on the electrical properties of cadmium sulphide thin filmsPhysica Status Solidi (b), 1968